A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Lo, G.-Q., Balasubramanian, N., Tung, C.-H., Benistant, F., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/68951
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Institution: National University of Singapore

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