Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

10.1109/LED.2004.824249

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Bibliographic Details
Main Authors: Yu, D.S., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge
Ge-on-insulator (GOI)
MOSFET
NiGe
NiSi
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81942
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Institution: National University of Singapore

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