Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)
10.1016/j.mee.2009.03.075
Saved in:
Main Authors: | Chin, A., Chang, M.F., Lin, S.H., Chen, W.B., Lee, P.T., Yeh, F.S., Liao, C.C., Li, M.-F., Su, N.C., Wang, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82366 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
COMPARISON OF THE EOT CLAUSE IN THE LOCAL CONTRACT FORMS
by: JULIANA MARK MEI HOONG
Published: (2019) -
Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
by: Kang, F.J., et al.
Published: (2014) -
Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014) -
A feasibility study on running roll on-roll off (RORO) vessel plying the Balingoan Misamis Orienta to Benoni Camiguin route
by: Kim Lim, Nestor L.
Published: (2003) -
Metal carbides for band-edge work function metal gate CMOS devices
by: Hwang, W.S., et al.
Published: (2014)