Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation

• Main Authors: Gong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.S., Antoniadis, D., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: (100) and (111) surface orientations; GeSn p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs); Si2H6 passivation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82415
• Institution: National University of Singapore

10.1109/LED.2012.2236880