High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

10.1109/LED.2005.848622

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書目詳細資料
Main Authors:	Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82467
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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