Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

10.1063/1.3607959

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Bibliographic Details
Main Authors:	Ivana, Pan, J., Zhang, Z., Zhang, X., Guo, H., Gong, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82896
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Institution:	National University of Singapore

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