Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

10.1109/LED.2006.882569

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書目詳細資料
Main Authors:	Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	CMOS Dual work function (WF) Gate first Intermixing (InM) Metal gate
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83280
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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