Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)

Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator Semiconductor (GaN MISHEMT) is a well-known material since the discovery of its properties due to high thermal operations, high frequency and high power to be applied in the Microfabrication device application. Hence,...

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書目詳細資料
主要作者:	Lau, Sien Hui
其他作者:	Ng Geok Ing
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2020
主題:	Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/141852
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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