Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Ong, Eugene Wei Han
مؤلفون آخرون:	Ng Geok Ing
التنسيق:	Final Year Project
اللغة:	English
منشور في:	Nanyang Technological University 2024
الموضوعات:	Engineering HEMT
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/177182
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs)
بواسطة: Ong, Zi Kai
منشور في: (2020)

FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
بواسطة: LIU JINGWEI
منشور في: (2019)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
بواسطة: Lau, Sien Hui
منشور في: (2020)

Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)
بواسطة: Hu, Shihao
منشور في: (2023)

AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
بواسطة: LIU CHANG
منشور في: (2010)

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
بواسطة: Liu, C., وآخرون
منشور في: (2014)

Fabrication and characterization of AIGaN/GaN HEMTs
بواسطة: HOY KIN MENG, DERRICK
منشور في: (2010)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
بواسطة: Wang, H.T., وآخرون
منشور في: (2014)

GaN HEMTs device modeling in high-power and high-frequency applications
بواسطة: Zhang, Juncheng
منشور في: (2025)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
بواسطة: Gao, Yu, وآخرون
منشور في: (2019)

Studies of gallium nitride high electron mobility transistors (HEMTs)
بواسطة: Tie, Keven Guo Sheng
منشور في: (2022)

Characterization and Numerical simulation of Gallium Nitride-based Metal-oxide-semiconductor High Electron Mobility Transistor with High-K Gate Stack
بواسطة: LOW KIM FONG EDWIN
منشور في: (2012)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
بواسطة: Xing, Weichuan, وآخرون
منشور في: (2020)

Characterizations of GaN-based high-electron-mobility-transistors (hemts)
بواسطة: Wong, Wei Jie.
منشور في: (2012)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
بواسطة: Ahmed Salah Hawash Razeen
منشور في: (2024)

An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
بواسطة: Chang, C.-Y., وآخرون
منشور في: (2021)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
بواسطة: Liu, Siyu, وآخرون
منشور في: (2024)

AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets
بواسطة: Li, Hanchao, وآخرون
منشور في: (2025)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
بواسطة: Ranjan, Kumud, وآخرون
منشور في: (2020)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
بواسطة: Wang, Y.-H., وآخرون
منشور في: (2014)

Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
بواسطة: Phia, Chen Yew
منشور في: (2020)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
بواسطة: Sasangka, W. A., وآخرون
منشور في: (2017)

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
بواسطة: Jia, Y., وآخرون
منشور في: (2021)

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique
بواسطة: Zhuang, Yihao, وآخرون
منشور في: (2024)

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
بواسطة: Xing, Weichuan, وآخرون
منشور في: (2018)

STUDY ON THE REDUCTION OF ACCESS RESISTANCE OF INAIN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
بواسطة: LIU YI
منشور في: (2015)

Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)
بواسطة: Seah, Alex Tian Long
منشور في: (2018)

DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
بواسطة: WANG YUN-HSIANG
منشور في: (2016)

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
بواسطة: Murugapandiyan, P., وآخرون
منشور في: (2020)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
بواسطة: Huang, H., وآخرون
منشور في: (2014)

Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
بواسطة: Huang, H., وآخرون
منشور في: (2014)

Studies of gallium nitride high electron mobility transistors
بواسطة: Goh, Basil Yan Kun
منشور في: (2016)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
بواسطة: Huang, H., وآخرون
منشور في: (2014)

An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
بواسطة: Wenrui Hu, وآخرون
منشور في: (2021)

Frequency-dependent behavior of optically illuminated HEMT
بواسطة: Yajian, H., وآخرون
منشور في: (2014)

EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
بواسطة: WANG CHENGKUAN
منشور في: (2024)

Development of compact power electronics inverter using gallium nitride (GaN) devices
بواسطة: Sinurat, Hendry Donald Hanesty
منشور في: (2015)

Characterization of gallium nitride grown on sapphire and GaN substrates
بواسطة: TAN LAY THENG
منشور في: (2010)

Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
بواسطة: CHUA, SOO JIN, وآخرون
منشور في: (2012)

Methodology for assessing the reliability of GaN high-electron-mobility transistors
بواسطة: Gunawan, Anton.
منشور في: (2012)