Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...

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書目詳細資料
主要作者:	Ong, Eugene Wei Han
其他作者:	Ng Geok Ing
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2024
主題:	Engineering HEMT
在線閱讀:	https://hdl.handle.net/10356/177182
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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