Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
Ph.D
Saved in:
Main Author: | ZHANG QINGCHUN |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/16234 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation
by: Zhang, Q., et al.
Published: (2014) -
Schottky source/drain transistor integrated with high-k and metal gate for sub-tenth nm technology
by: LI RUI
Published: (2010) -
Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
by: Li, R., et al.
Published: (2014) -
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
by: Li, R., et al.
Published: (2014) -
Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014)