Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure

Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure

Ph.D

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書目詳細資料
主要作者:	ZHANG QINGCHUN
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Theses and Dissertations
語言:	English
出版:	2010
主題:	Germanium, MOSFET, High-Îº gate dielectric, Junction, Laser annealing, Nickel Germanide
在線閱讀:	https://scholarbank.nus.edu.sg/handle/10635/16234
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore
語言:	English

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