Advanced source and drain contact engineering for multiple- gate transistors
Ph.D
Saved in:
Main Author: | LEE TEK PO RINUS |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/17722 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
by: Lee, R.T.-P., et al.
Published: (2014) -
P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
by: Lee, R.T.-P., et al.
Published: (2014) -
Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
by: Lee, R.T.P., et al.
Published: (2014) -
The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014) -
Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
by: Lee, R.T.P., et al.
Published: (2014)