Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

10.1016/S0038-1101(00)00037-X

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Cho, B.J., Kim, S.J., Ling, C.H., Joo, M.-S., Yeo, I.-S.
مؤلفون آخرون:	ELECTRICAL ENGINEERING
التنسيق:	مقال
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/61950
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

مواد مشابهة

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