The gate leakage current in graphene field-effect transistor

The gate leakage current in graphene field-effect transistor

10.1109/LED.2008.2001475

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Bibliographic Details
Main Authors:	Mao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dielectric films Graphene electronics Metal-oxide-semiconductor field-effect transistors (MOSFETs) Tunneling
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/65039
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Institution:	National University of Singapore

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