Effects of poly-Si annealing on gate oxide charging damage in Poly-Si gate etching process

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Chong, D., Yoo, W.J., Chan, L., See, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70098
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Institution: National University of Singapore

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