Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts
10.1109/LED.2004.835791
Saved in:
Main Authors: | Ding, S.-J., Hu, H., Zhu, C., Li, M.F., Kim, S.J., Cho, B.J., Chan, D.S.H., Yu, M.B., Du, A.Y., Chin, A., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82303 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectrics
by: Ding, S.-J., et al.
Published: (2014) -
High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics
by: Ding, S.-J., et al.
Published: (2014) -
High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications
by: Hu, H., et al.
Published: (2014) -
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
by: Ding, S.-J., et al.
Published: (2014) -
A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics
by: Yu, X., et al.
Published: (2014)