Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor
10.1063/1.4792477
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Main Authors: | Ding, Y., Cheng, R., Du, A., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82613 |
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Institution: | National University of Singapore |
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