Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

10.1143/JJAP.50.04DJ07

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/83038
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

مواد مشابهة

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