Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure

10.1143/JJAP.50.04DJ07

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書目詳細資料
Main Authors:	Han, G., Guo, P., Yang, Y., Fan, L., Yee, Y.S., Zhan, C., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83038
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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