Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

10.1109/VTSA.2007.378954

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Tung, C.-H., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83698
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Institution:	National University of Singapore

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