Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors

10.1109/RELPHY.2007.369569

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Bibliographic Details
Main Authors: Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83804
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Institution: National University of Singapore

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