Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts

Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts

10.1149/1.3700470

Saved in:

Bibliographic Details
Main Authors:	Zhang, X., Guo, H.X., Gong, X., Guo, C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83992
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts
by: Zhang, X., et al.
Published: (2014)

Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
by: Guo, H.X., et al.
Published: (2014)

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As
by: Ivana, et al.
Published: (2014)

A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
by: Zhang, X., et al.
Published: (2014)

In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
by: Zhang, X., et al.
Published: (2014)

Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
by: Ivana, et al.
Published: (2014)

Silane and ammonia surface passivation technology for high-mobility In 0.53Ga0.47As MOSFETs
by: Chin, H.-C., et al.
Published: (2014)

Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs
by: Chin, H.-C., et al.
Published: (2014)

Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In0.53Ga0.47As
by: Chor, E.F., et al.
Published: (2014)

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
by: Ivana, et al.
Published: (2014)

Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
by: Chin, H.-C., et al.
Published: (2014)

Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction
by: Guo, P., et al.
Published: (2014)

Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
by: Chin, H.-C., et al.
Published: (2014)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
by: Hu, Hailong., et al.
Published: (2013)

Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction
by: Guo, P., et al.
Published: (2014)

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
by: Richard D'Costa, Vijay, et al.
Published: (2014)

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
by: Zhang, X., et al.
Published: (2014)

Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
by: Chin, H.-C., et al.
Published: (2014)

Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
by: SUMARLINA AZZAH BTE SULEIMAN
Published: (2014)

Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
by: Chin, H.-C., et al.
Published: (2014)

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
by: Lin, J.Q., et al.
Published: (2014)

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
by: Sun, Handong, et al.
Published: (2009)

In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
by: Zhang, X., et al.
Published: (2014)

Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
by: Zhang, X., et al.
Published: (2014)

Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor
by: Suleiman, S.A., et al.
Published: (2014)

In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression
by: Zhu, Z., et al.
Published: (2014)

In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
by: Zhang, X., et al.
Published: (2014)

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
by: Subramanian, S., et al.
Published: (2014)

Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
by: Subramanian, S., et al.
Published: (2014)

Pd-InGaAs as a new self-aligned contact material on InGaAs
by: Kong, E.Y.-J., et al.
Published: (2014)

Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
by: Gong, X., et al.
Published: (2014)

Multiferroic CoFe2O4-Pb(Zr0.53Ti0.47)O3 thick films for magnetoelectric application
by: Chen, Wei
Published: (2012)

The dynamics of nickelidation for self-aligned contacts to InGaAs channels
by: Chen, Renjie, et al.
Published: (2019)

Self-aligned gate-first In0.7Ga0.3 As n-MOSFETs with an InP capping layer for performance enhancement
by: Gong, X., et al.
Published: (2014)

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
by: Kong, E.Y.-J., et al.
Published: (2014)

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
by: Oh, H.J., et al.
Published: (2014)

Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum-well lasers emitting at 1.55 μm
by: Khoo, Hong Khai, et al.
Published: (2014)

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
by: Lin, J., et al.
Published: (2014)

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)
by: Kumar, Annie, et al.
Published: (2019)

PROPERTIES OF G354.61+0.47 BASED ON ITS CHEMICAL COMPOSITION
by: Rahmi Izzati, Fathia