Work function tuning of metal nitride electrodes for advanced CMOS devices

Work function tuning of metal nitride electrodes for advanced CMOS devices

10.1016/j.tsf.2005.09.081

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Bibliographic Details
Main Authors: Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Lanthanide
Metal gate electrode
Metal nitride
Work function tuning
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84367
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Institution: National University of Singapore

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