Work function tuning of metal nitride electrodes for advanced CMOS devices

Work function tuning of metal nitride electrodes for advanced CMOS devices

10.1016/j.tsf.2005.09.081

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Conference or Workshop Item
منشور في:	2014
الموضوعات:	Lanthanide Metal gate electrode Metal nitride Work function tuning
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/84367
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

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