Study of interactions between α-Ta films and SiO2 under rapid thermal annealing
10.1016/j.tsf.2004.05.056
Saved in:
Main Authors: | Yuan, Z.L., Zhang, D.H., Li, C.Y., Prasad, K., Tan, C.M. |
---|---|
Other Authors: | CHEMICAL & BIOMOLECULAR ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/90220 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Thermal stability of Cu/α-Ta/SiO2/Si structures
by: Yuan, Z.L., et al.
Published: (2014) -
Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing
by: Choi, W.K., et al.
Published: (2014) -
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
by: Heng, C.L., et al.
Published: (2014) -
Evolution of structural, surfacial and mechanical properties of titanium-nickel-copper thin films during rapid thermal annealing
by: Motemani, Y., et al.
Published: (2014) -
Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing
by: Latt, K.M., et al.
Published: (2014)