Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure
10.1023/A:1012590305144
Saved in:
Main Authors: | Latt, K.M., Sher-Yi, C., Osipowicz, T., Lee, K., Lee, Y.K. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96031 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2
by: Lee, Y.K., et al.
Published: (2014) -
Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure
by: Latt, K.M., et al.
Published: (2014) -
The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure
by: Latt, K.M., et al.
Published: (2014) -
Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing
by: Latt, K.M., et al.
Published: (2014) -
Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
by: Latt, K.M., et al.
Published: (2014)