Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

by Chi, D.Z., Yao, H.B., Liew, S.L., Tan, C.C., Chua, C.T., Chua, K.C., Li, R., Lee, S.J.
Published 2014

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

by Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Published 2014

Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs

by Lee, R.T.P., Tan, K.-M., Liow, T.-Y., Lim, A.E.-J., Lo, G.-Q., Samudra', G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack

by Gao, F., Lee, S.J., Rui, L., Wang, S.J., Cho, B.J., Balakumar, S., Tung, C.-H., Chi, D.Z., Kwong, D.L.
Published 2014

Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

by Liew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z.
Published 2014

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

by Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate

by Yu, H.P., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Dawood, M.K., Ow, K.Q., Chi, D.Z.
Published 2014

Study of Ge out-diffusion during nickel (Platinum - 0, 5, 10 at.%) germanosilicide formation

by Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z.
Published 2014

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

by Gao, F., Lee, S.J., Li, R., Whang, S.J., Balakumar, S., Chi, D.Z., Kean, C.C., Vicknesh, S., Tung, C.H., Kwong, D.-L.
Published 2014

Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors

by Lee, R.T.P., Yang, L.-T., Ang, K.-W., Liow, T.-Y., Tan, K.-M., Wong, A.S.-W., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Fabrication of a TiNx/Ni/Au contact on ZnO films with high thermal stability and low resistance

by Chai, J.W., Yang, M., Chi, D.Z., Ong, J.L.T., Wang, S.J., Zhang, Z., Pan, J.S., Feng, Y.P., Chua, S.J.
Published 2014

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free p...

by Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Published 2014

The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

by Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
Published 2014

Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

by Yao, H.B., Tan, C.C., Liew, S.L., Chua, C.T., Chua, C.K., Li, R., Lee, R.T.P., Lee, S.J., Chi, D.Z.
Published 2014

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

by Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Ang, K.-W., Chui, K.-J., Guo, Q.-L., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

by Chia, C.K., Dong, J.R., Chi, D.Z., Sridhara, A., Wong, A.S.W., Suryana, M., Dalapati, G.K., Chua, S.J., Lee, S.J.
Published 2014

The stability of aluminium oxide monolayer and its interface with two-dimensional materials

by Song T.T., Yang M., Chai J.W., Callsen M., Zhou J., Yang T., Zhang Z., Pan J.S., Chi D.Z., Feng Y.P., Wang S.J.
Published 2020

Suppression of oxidation in nickel germanosilicides by Pt incorporation

by Rahman, M.A., Osipowicz, T., Pey, K.L., Jin, L.J., Choi, W.K., Chi, D.Z., Antoniadis, D.A., Fitzgerald, E.A., Isaacson, D.M.
Published 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

by Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
Published 2014

Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications

by Kumar, A., Dalapati, G.K., Hidayat, H., Law, F., Tan, H.R., Widenborg, P.I., Hoex, B., Tan, C.C., Chi, D.Z., Aberle, A.G.
Published 2014