Analysis of high-dielectric constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
The novelty of this study lies in the application of the scanning tunneling microscopy (STM), to study the electronic properties of the high-k gate stack at nanometre scale. The samples are the HfO2/SiOx and the Sc2O3/La2O3/SiOx gate stacks. Based on tunneling and energy band theory, the polycrysta...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/19017 |
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| Institution: | Nanyang Technological University |
| Language: | English |