Chemical and mechanical polishing for realization of advanced planarization schemes and patterned SOI structures

First part aimed at producing varied planarization schemes that are suitable for both the Shallow Trench Isolated test structures and the Static Random Access Memory structures. Second part, the direct-wafer bonding process was employed to arrive at the Silicon-On-Insulator substrates.

Saved in:
Bibliographic Details
Main Authors: Goh, Wang Ling., Tse, Man Siu.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2776
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University

Similar Items