Characterization and modeling of negative bias temperature instability in P-MOSFETs

• المؤلف الرئيسي: Yang, Jianbo
• مؤلفون آخرون: Chen Tupei
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/35246
• المؤسسة: Nanyang Technological University

This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study...