Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

• Main Authors: Agrawal, Manvi, Ravikiran, Lingaparthi, Dharmarasu, Nethaji, Radhakrishnan, K., Karthikeyan, Giri Sadasivam, Zheng, Yuanjin
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Interface structure; III-V semiconductors
• Online Access: https://hdl.handle.net/10356/84955; http://hdl.handle.net/10220/42082
• Institution: Nanyang Technological University

The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the interme...