Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, repres...

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書目詳細資料
Main Authors:	Shao, W., Chen, Z., Tu, K. N., Gusak, A. M., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Li, Hong Yu
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Materials
在線閱讀:	https://hdl.handle.net/10356/94915 http://hdl.handle.net/10220/7699
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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