A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode

A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode

A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-...

Saved in:

書目詳細資料
Main Authors:	Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/97684 http://hdl.handle.net/10220/13176
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode
由: Tran, Xuan Anh, et al.
出版: (2013)

A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
由: Yu, Hongyu, et al.
出版: (2013)

Self-selection unipolar HfOx-Based RRAM
由: Tran, X.A., et al.
出版: (2014)

CMOS friendly electrode material screening for HfOx-based RRAM
由: Yan, Haiping
出版: (2013)

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application
由: Tran, X.A., et al.
出版: (2014)

HfOx BASED RRAM ENDURANCE IMPROVEMENT WITH OXYGEN PLASMA TREATMENT
由: YAN JIANGHU
出版: (2022)

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode
由: Tran, X.A., et al.
出版: (2014)

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
由: Tran, X.A., et al.
出版: (2014)

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
由: Tran, X.A., et al.
出版: (2014)

The transport properties of oxygen vacancy-related polaron-like bound state in HfOx
由: Wang, Zhongrui, et al.
出版: (2014)

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
由: Tran, X.A., et al.
出版: (2014)

Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells
由: Fang, Z., et al.
出版: (2013)

Conduction mechanisms in Ti/HfOx/Pt resistive switching memory device
由: Tan, Kuan Hong
出版: (2020)

Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch
由: Zhang, H. Z., et al.
出版: (2017)

Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
由: Wu, L., et al.
出版: (2013)

Enhancement of spin-orbit torque in Pt/Co/HfOx heterostructures with voltage-controlled oxygen ion migration
由: Wu, Shuo, et al.
出版: (2023)

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device
由: Ang, Diing Shenp, et al.
出版: (2014)

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy
由: Li, H. K., et al.
出版: (2016)

Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
由: Ang, Diing Shenp, et al.
出版: (2016)

A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
由: Liu, W. J., et al.
出版: (2013)

A large-size HfO₂ based RRAM structure suitable for integration of one RRAM with one InGaZnO thin film transistor for large-area applications
由: Li, Yuanbo, et al.
出版: (2022)

Mechanism of different switching directions in graphene oxide based RRAM
由: Wang, Zhongrui, et al.
出版: (2013)

Simulation of resistive random-access memory (RRAM) : SPICE modelling of RRAM device
由: Lian, Jie
出版: (2021)

Germanium incorporation in Hf O2 dielectric on germanium substrate
由: Zhang, Q., et al.
出版: (2014)

3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement
由: Sun, Jianxun, et al.
出版: (2021)

MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications
由: Yu, X., et al.
出版: (2014)

RRAM SPICE modeling with LT spice
由: Guan, Wenjiang
出版: (2024)

In-memory computing by RRAM for machine learning
由: Ni, Leibin
出版: (2018)

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application
由: Gao, Bin, et al.
出版: (2013)

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides
由: Chen, Y. S., et al.
出版: (2013)

LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays
由: Du, Yifan
出版: (2022)

The 3-D stacking bipolar RRAM for high density
由: Chen, Yi-Chung, et al.
出版: (2013)

LTspice implementation of PKU compact model of metal-oxide-based RRAM : part A simulation of DC current-voltage characteristics of RRAM device
由: Su, Ziheng
出版: (2021)

Process and material properties of HfLaOx prepared by atomic layer deposition
由: He, W., et al.
出版: (2014)

A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
由: Tran, X.A., et al.
出版: (2014)

Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
由: Gao, Bin, et al.
出版: (2013)

Non-volatile 3D stacking RRAM-based FPGA
由: Chen, Yi-Chung, et al.
出版: (2013)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
由: Li, R., et al.
出版: (2014)

AC DC rectifier (CMOS rectifier) to minimise reverse leakage current
由: Chan, Jeffery Jian Yang
出版: (2016)

Chinese views of the US war in Iraq : unipolarity vs. unipolarity - multipolarity
由: Nan, Li
出版: (2008)