Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow

Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow

10.1016/j.mee.2010.01.010

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Bibliographic Details
Main Authors: Dutta Gupta, S., Mitard, J., Eneman, G., De Jaeger, B., Meuris, M., Heyns, M.M.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2016
Subjects:
Channel-orientation
Enhanced mobility
Germanium (Ge)
pFET devices
Online Access:http://scholarbank.nus.edu.sg/handle/10635/128740
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Institution: National University of Singapore

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