Interface study of high-k oxide and Ge for the future Ge based MOSFET device

Interface study of high-k oxide and Ge for the future Ge based MOSFET device

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Bibliographic Details
Main Author:	DENG WENSHENG
Other Authors:	PHYSICS
Format:	Theses and Dissertations
Language:	English
Published:	2012
Subjects:	Interface study of high-k oxide and Ge for the future Ge based MOSFET device
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/31591
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Institution:	National University of Singapore
Language:	English

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