Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

10.1149/1.2917901

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書目詳細資料
Main Authors:	Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
其他作者:	CHEMICAL & BIOMOLECULAR ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/64768
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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