Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

10.1149/1.1618071

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Bibliographic Details
Main Authors:	Yeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82508
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Institution:	National University of Singapore

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