Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors

Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors

Materials Research Society Symposium Proceedings

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Lee, R.T.P., Yang, L.-T., Ang, K.-W., Liow, T.-Y., Tan, K.-M., Wong, A.S.-W., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Conference or Workshop Item
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/83938
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
بواسطة: Lee, R.T.P., وآخرون
منشور في: (2014)

Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
بواسطة: Zhou, Q., وآخرون
منشور في: (2014)

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain
بواسطة: Lee, R.T.P., وآخرون
منشور في: (2014)

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
بواسطة: Ang, K.-W., وآخرون
منشور في: (2014)

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
بواسطة: Tan, K.-M., وآخرون
منشور في: (2014)

N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
بواسطة: Ang, K.-W., وآخرون
منشور في: (2014)

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
بواسطة: Koh, S.-M., وآخرون
منشور في: (2014)

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
بواسطة: Lee, R.T.P., وآخرون
منشور في: (2014)

Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
بواسطة: Ang, K.-W., وآخرون
منشور في: (2014)

Carbon- and tin- Incorporated source/drain stressors for CMOS transistors
بواسطة: Yeo, Y.-C.
منشور في: (2014)

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
بواسطة: Lim, P.S.Y., وآخرون
منشور في: (2014)

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
بواسطة: Chui, K.-J., وآخرون
منشور في: (2014)

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
بواسطة: Tan, K.-M., وآخرون
منشور في: (2014)

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
بواسطة: Madan, A., وآخرون
منشور في: (2014)

Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
بواسطة: Wang, G.H., وآخرون
منشور في: (2014)

Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs
بواسطة: Lee, R.T.P., وآخرون
منشور في: (2014)

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
بواسطة: Ang, K.-W., وآخرون
منشور في: (2014)

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
بواسطة: Koh, A.T.-Y., وآخرون
منشور في: (2014)

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
بواسطة: Ang, K.-W., وآخرون
منشور في: (2014)

Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
بواسطة: Liow, T.-Y., وآخرون
منشور في: (2014)

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing
بواسطة: Lee, R.T.-P., وآخرون
منشور في: (2014)