Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. In this work, we conducted first-principles modeling and simulation to investigate BTI performance in the SiON, HfO2 and La doped HfO2 MOSFET gate stacks. The properties of VO, Oi and VO-Oi defect pai...

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書目詳細資料
主要作者:	Gu, Chenjie
其他作者:	Ang Diing Shenp
格式:	Theses and Dissertations
語言:	English
出版:	2015
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/62224
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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