Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. In this work, we conducted first-principles modeling and simulation to investigate BTI performance in the SiON, HfO2 and La doped HfO2 MOSFET gate stacks. The properties of VO, Oi and VO-Oi defect pai...

Saved in:

書目詳細資料
主要作者:	Gu, Chenjie
其他作者:	Ang Diing Shenp
格式:	Theses and Dissertations
語言:	English
出版:	2015
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	https://hdl.handle.net/10356/62224
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy
由: Yew, Kwang Sing
出版: (2014)

Simulation of resistive random-access memory (RRAM) : SPICE modelling of RRAM device
由: Lian, Jie
出版: (2021)

High-κ/metal gate for advanced transistor applications
由: Duan, Tianli
出版: (2015)

Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks
由: Raghavan, Nagarajan, et al.
出版: (2013)

Analysis of high-dielectric constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
由: Ong, Yi Ching
出版: (2009)

Simulation of neural networks for neuromorphic chip with crossbar array of RRAM synapses
由: Sreejith Kumar Ashish Jith
出版: (2019)

Oxide-defects driven study on reliability and synaptic response characterization of logic devices
由: Ju, Xin
出版: (2021)

Atomistic simulation of structure and mobility of dislocation in semiconductor
由: Choo, Zhi Min.
出版: (2008)

Electrical properties of neodymium oxide/titanium dioxide and neodymium oxide/gadolinium silicate dielectric gate stack on silicon substrate
由: Lee, Vivian Sing Zhi.
出版: (2012)

Advanced CMOS technologies (high-k/metal gate stacks) for sub-22nm node
由: Wu, Ling
出版: (2013)

CMOS friendly electrode material screening for HfOx-based RRAM
由: Yan, Haiping
出版: (2013)

Atomistic simulation of epitaxial Si film growth on Si (001) surface
由: Xie, Xuepeng.
出版: (2008)

The 3-D stacking bipolar RRAM for high density
由: Chen, Yi-Chung, et al.
出版: (2013)

Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
由: Fang, Zheng
出版: (2013)

Interfaces at crystalline metal gate/high-k oxide/Si stacks: Characterizations and atomistic modeling
由: DONG YUFENG
出版: (2010)

Influence of cleaning process on gate oxide integrity
由: Liu, Qing Guang.
出版: (2008)

Characterization of gate oxide degradation caused by electrical stress
由: Huang, Jiayi.
出版: (2008)

Non-volatile 3D stacking RRAM-based FPGA
由: Chen, Yi-Chung, et al.
出版: (2013)

LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays
由: Du, Yifan
出版: (2022)

Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
由: Yew, K. S., et al.
出版: (2013)

Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
由: Gao, Bin, et al.
出版: (2013)

Statistical characterization and reliability modeling of novel high-K gate dielectric stacks
由: Nagarajan Raghavan
出版: (2012)

Nanoscale characterization and analysis of localized degradation and breakdown of high-k dielectric stacks
由: Shubhakar.
出版: (2013)

LTspice implementation of PKU compact model of metal-oxide-based RRAM : part A simulation of DC current-voltage characteristics of RRAM device
由: Su, Ziheng
出版: (2021)

Double-gated CNTFETs with Al2O3/Si3N4 as gate dielectrics
由: Fan, Yu
出版: (2009)

A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET
由: Gu, Chenjie, et al.
出版: (2018)

Solder joints morphology study on stacked die
由: Lee, Yi Xuan.
出版: (2011)

Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress
由: Raghavan, Nagarajan, et al.
出版: (2013)

Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation
由: Wu, Xing
出版: (2012)

Methodology for assessing the reliability of GaN high-electron-mobility transistors
由: Gunawan, Anton.
出版: (2012)

Low power clock-gated CMOS circuits
由: Liu, Youyang.
出版: (2013)

Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack
由: Lwin, Z. Z., et al.
出版: (2013)

Reliability of copper wire bonding
由: Ang, Joash Wei Qiang
出版: (2012)

Reliability modeling for ULSI interconnects
由: Hou, Yue Jin
出版: (2010)

3D current path in stacked devices : metrics and challenges
由: Kor, H. B., et al.
出版: (2011)

Design for reliability through engineering optimization
由: Ng, Wee Loon
出版: (2015)

Mechanism of different switching directions in graphene oxide based RRAM
由: Wang, Zhongrui, et al.
出版: (2013)

Robust electromigration reliability through engineering optimization
由: Tee, Kheng Chok, et al.
出版: (2014)

Process induced reliability of through silicon via
由: Zhang, Jiye
出版: (2014)

A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
由: Yew, K. S., et al.
出版: (2013)