A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode

• المؤلفون الرئيسيون: Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97684; http://hdl.handle.net/10220/13176

A self-rectifying unipolar RRAM based on HfOx dielectrics using highly doped n-type germanium substrate as the bottom electrode is proposed for the first time. The RRAM cells exhibit a stable unipolar resistive switching behavior. Owning to Schottky barrier between defect states in HfOx layer and n-...