Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements
Electron device letters
Saved in:
Main Authors: | Ling, C.H., Yeow, Y.T., Ah, L.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/61928 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals
by: Ang, D.S., et al.
Published: (2014) -
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current
by: Ling, C.H., et al.
Published: (2014) -
Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs
by: Mathew, S., et al.
Published: (2014) -
Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
by: Yeow, Y.T., et al.
Published: (2014) -
Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
by: Yeow, Y.T., et al.
Published: (2014)