Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

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Main Authors:	Ling, C.H., Yeow, Y.T., Ah, L.K.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/61928
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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