Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors

Investigations of HfO2 AlGaNGaN metal-oxide-semiconductor high electron mobility transistors

10.1063/1.2198507

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Bibliographic Details
Main Authors:	Liu, C., Chor, E.F., Tan, L.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82583
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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