Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

10.1109/IEDM.2009.5424354

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	Conference or Workshop Item
منشور في:	2014
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/84301
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
بواسطة: Lin, J., وآخرون
منشور في: (2014)

Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation
بواسطة: Oh, H.-J., وآخرون
منشور في: (2014)

A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
بواسطة: Lin, J.Q., وآخرون
منشور في: (2014)

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy
بواسطة: Oh, H.J., وآخرون
منشور في: (2014)

Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
بواسطة: Subramanian, S., وآخرون
منشور في: (2014)

Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
بواسطة: Wu, N., وآخرون
منشور في: (2014)

GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
بواسطة: Gao, F., وآخرون
منشور في: (2014)

Pd-InGaAs as a new self-aligned contact material on InGaAs
بواسطة: Kong, E.Y.-J., وآخرون
منشور في: (2014)

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
بواسطة: Peng, J.W., وآخرون
منشور في: (2014)

Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides
بواسطة: Liu, W.J., وآخرون
منشور في: (2014)

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
بواسطة: Wu, N., وآخرون
منشور في: (2014)

Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
بواسطة: Liu, W.J., وآخرون
منشور في: (2014)

In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
بواسطة: Yeo, Y.-C., وآخرون
منشور في: (2014)

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
بواسطة: Yang, T., وآخرون
منشور في: (2014)

Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
بواسطة: Ivana, وآخرون
منشور في: (2014)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
بواسطة: Li, R., وآخرون
منشور في: (2014)

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
بواسطة: Gao, F., وآخرون
منشور في: (2014)

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs
بواسطة: Lek, C.M., وآخرون
منشور في: (2014)

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
بواسطة: Ya Lim, P.S., وآخرون
منشور في: (2014)

Metal gate work function engineering on gate leakage of MOSFETs
بواسطة: Hou, Y.-T., وآخرون
منشور في: (2014)

Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
بواسطة: Whang, S.J., وآخرون
منشور في: (2014)

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
بواسطة: Kong, E.Y.-J., وآخرون
منشور في: (2014)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
بواسطة: Zhu, S., وآخرون
منشور في: (2014)

Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
بواسطة: Zhu, S., وآخرون
منشور في: (2014)

High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology
بواسطة: Chin, A., وآخرون
منشور في: (2014)

Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
بواسطة: Gao, F., وآخرون
منشور في: (2014)

Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
بواسطة: Lee, P.S., وآخرون
منشور في: (2014)

Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel
بواسطة: Jiang, Y., وآخرون
منشور في: (2014)

Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes
بواسطة: Zhu, S., وآخرون
منشور في: (2014)

Negative-bias temperature instability (NBTI) characterization of MOSFETS employing decoupled-plasma-nitrided gate oxides
بواسطة: Lai, Simon Chung Sing
منشور في: (2011)

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
بواسطة: Gao, F., وآخرون
منشور في: (2014)

The dynamics of nickelidation for self-aligned contacts to InGaAs channels
بواسطة: Chen, Renjie, وآخرون
منشور في: (2019)

Source / Drain Engineering in InGaAs n-MOSFETs for Logic Device Applications
بواسطة: SUJITH SUBRAMANIAN
منشور في: (2014)

A novel surface passivation process for HfO 2 Ge MOSFETs
بواسطة: Wu, N., وآخرون
منشور في: (2014)

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
بواسطة: Zhu, S., وآخرون
منشور في: (2014)