Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

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書目詳細資料
Main Authors:	Huang, C.H., Yang, M.Y., Chin, A., Chen, W.J., Zhu, C.X., Cho, B.J., Li, M.-F., Kwong, D.L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84351
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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