Processing and characterization of low-k materials for ULSI application
In this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/5060 |
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| Institution: | Nanyang Technological University |