Simulation of tunneling field-effect transistors with extended source structures

Simulation of tunneling field-effect transistors with extended source structures

10.1063/1.4729068

Saved in:

Bibliographic Details
Main Authors:	Yang, Y., Guo, P., Han, G., Lu Low, K., Zhan, C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84190
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Source engineering for tunnel field-effect transistor: Elevated source with vertical silicon-germanium/germanium heterostructure
by: Han, G., et al.
Published: (2014)

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
by: Han, G., et al.
Published: (2014)

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
by: Yang, Y., et al.
Published: (2014)

Tunneling field-effect transistor: Effect of strain and temperature on tunneling current
by: Guo, P.-F., et al.
Published: (2014)

SPICE behavioral model of the tunneling field-effect transistor for circuit simulation
by: Hong, Y., et al.
Published: (2014)

Strain engineering and junction design for tunnel field-effect transistor
by: Yeo, Y.-C., et al.
Published: (2014)

Device physics and design of a L-shaped germanium source tunneling transistor
by: Low, K.L., et al.
Published: (2014)

Tunneling field-effect transistor: Capacitance components and modeling
by: Yang, Y., et al.
Published: (2014)

Germanium tin tunneling field-effect transistor for sub-0.4 v operation
by: Yang, Y., et al.
Published: (2014)

Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junction
by: Guo, P., et al.
Published: (2014)

Simulation and optimisation of a tunneling field effect transistor
by: Neo, Samuel Choon Wee
Published: (2011)

Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction
by: Guo, P., et al.
Published: (2014)

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
by: Toh, E.-H., et al.
Published: (2014)

Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
by: Yang, Y., et al.
Published: (2014)

Source/drain doping influence on heterojunction graphene nanoribbon tunneling field effect transistors
by: Da, H., et al.
Published: (2014)

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
by: Toh, E.-H., et al.
Published: (2014)

PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
by: Han, G., et al.
Published: (2014)

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
by: Toh, E.-H., et al.
Published: (2014)

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
by: Yang, Y., et al.
Published: (2014)

Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
by: YANG YUE
Published: (2013)

Tin-incorporated source/drain and channel materials for field-effect transistors
by: Yeo, Y.-C., et al.
Published: (2014)

Fabrication and Characterization of Tunneling Field Effect Transistors (TFETs)
by: YANG LITAO
Published: (2011)

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
by: Hu, Hailong., et al.
Published: (2013)

Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS
by: GUO PENGFEI
Published: (2013)

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
by: Liu, B., et al.
Published: (2014)

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
by: Toh, E.-H., et al.
Published: (2014)

Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
by: Liu, B., et al.
Published: (2014)

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
by: Da, H., et al.
Published: (2014)

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
by: Tan, K.-M., et al.
Published: (2014)

Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction
by: Han, G., et al.
Published: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Strained channel transistor using strain field induced by source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
by: Koh, S.-M., et al.
Published: (2014)

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
by: Lee, R.T.P., et al.
Published: (2014)

Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channel
by: Da, H., et al.
Published: (2014)

ADVANCED SOURCE AND DRAIN CONTACT ENGINEERING FOR FIELD-EFFECT TRANSISTORS
by: WU YING
Published: (2019)

Charge transport in polymer semiconductor field-effect transistors
by: GUO HAN
Published: (2014)

Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors
by: Lam, K.-T., et al.
Published: (2014)

Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement
by: Koh, S.-M., et al.
Published: (2014)

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
by: Liu, B., et al.
Published: (2014)