On the "switching defects" in the SiON and high-k gate dielectrics subjected to bias-temperature stressing

• Main Author: Boo, Ann Ann
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/64784
• Institution: Nanyang Technological University

Since 1960s, the most commonly cited model to explain NBTI (negative-bias-temperature-instability) mechanism was the Reaction-Diffusion (R-D) model which described the evolution of Si/ Si02 interface states (t..Ni1) contributing to NBTI based on a hydrogen-transport mechanism. However, there were st...